German semiconductor manufacturer Infineon Technologies AG (IFNNY) has unveiled the world's first 300 mm power gallium nitride (GaN) wafer technology. This pioneering advancement is anticipated to significantly propel the market for GaN-based power semiconductors.
Infineon plans to showcase the initial 300 mm GaN wafers at the electronica trade show in November 2024, held in Munich.
The company highlighted that chip production on 300 mm wafers represents a notable technological progression and is markedly more efficient compared to 200 mm wafers. The increased wafer diameter yields 2.3 times more chips per wafer.
Infineon has successfully produced 300 mm GaN wafers using an integrated pilot line within its existing 300 mm silicon production facility in Villach, Austria.
The 300 mm GaN technology can leverage existing 300 mm silicon manufacturing equipment, as the manufacturing processes for gallium nitride and silicon are quite similar.
Infineon emphasized that its current high-volume silicon 300 mm production lines are ideally suited to pilot the dependable GaN technology.
The company intends to further scale GaN capacity in response to market demand.
GaN-based power semiconductors are being rapidly adopted across various sectors, including industrial, automotive, consumer, computing, and communication applications. These applications encompass power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems.
Jochen Hanebeck, CEO of Infineon, remarked, "This technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after acquiring GaN Systems, we are once again demonstrating our commitment to leading the fast-growing GaN market. As a leader in power systems, Infineon is proficient in all three key materials: silicon, silicon carbide, and gallium nitride."
In Germany, Infineon shares were trading at 28.89 euros, reflecting a 1.30 percent increase.
